Vacuum-free and highly dense nanoparticle based low-band-gap CuInSe2 thin-films manufactured by face-to-face annealing with application of uniaxial mechanical pressure

Abstract

Copper indium gallium sulfo-selenide (CIGS) based solar cells show the highest conversion efficiencies among all thin-film photovoltaic competition. However, the absorber material manufacturing is in most cases dependent on vacuum-technology like sputtering and evaporation, and the use of toxic and environmentally harmful substances like H2Se. In this work, the goal to fabricate dense, coarse grained CuInSe2 (CISe) thin-films with vacuum-free processing based on nanoparticle (NP) precursors was achieved. Bimetallic copper-indium, elemental selenium and binary selenide (Cu2-xSe and In2Se3) NPs were synthesized by wet-chemical methods and dispersed in nontoxic solvents. Layer-stacks from these inks were printed on molybdenum coated float-glass-substrates via doctor-blading. During the temperature treatment, a face-to-face technique and mechanically applied pressure were used to transform the precursor-stacks into dense CuInSe2 films. By combining liquid phase sintering and pressure sintering, and using a seeding layer later on, issues like high porosity, oxidation, or selenium- and indium-depletion were overcome. There was no need for external Se atmosphere or H2Se gas, as all of the Se was directly in the precursor and could not leave the face-to-face sandwich. All thin-films were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), and UV/vis spectroscopy. Dense CISe layers with a thickness of about 2-3 μm and low band gap energies of 0.93-0.97 eV were formed in this work, which show potential to be used as a solar cell absorber.