Interface electronic structure and valence band dispersion of bis(1,2,5-thiadiazolo)-p-quinobis(1,3-dithiole) on polycrystalline Au electrodes

Abstract

Bis(1,2,5-thiadiazolo)-p-quinobis(1,3-dithiole) (BTQBT) is a promising material for application in vertical organic transistor devices because of considerable energy dispersion in its valence band (VB). In this study, the electronic structure at the interface of BTQBT on polycrystalline Au electrodes was elucidated by photoelectron spectroscopy (PES). The excitation photon energy-dependence of the PES corroborated a widely dispersing VB of the solid-state BTQBT on Au. An intermolecular transfer integral of 75 meV and the hole effective mass of 4.3m0 were derived from the present results.