Pulsed laser deposition chamber for in situ X-ray diffraction

Abstract

A sample chamber has been constructed for studying the growth of thin films by pulsed laser deposition in situ with surface X-ray diffraction. The achievable temperature ranges from room temperature to 1073 K in a controlled oxygen environment. The partial pressure of the oxygen background gas covers the range from 0.1 to 1015 Pa. The first results, showing intensity oscillations in the diffracted signal during homoepitaxial deposition of SrTiO3, are presented. © 2005 International Union of Crystallography Printed in Great Britain - all rights reserved.