PZT actuated seesaw SPDT RF MEMS switch

Abstract

A low actuation voltage and no contact stiction are important factors in applying micro-electro-mechanical-system (MEMS) RF switches to mobile communication devices. Conventional electrostatic RF MEMS switches require several tens of voltages for actuation. In this paper we propose a piezoelectric actuated seesaw (PAS) RF MEMS switch which adopts Pb(Zr, Ti)O3 (PZT) actuators and seesaw cantilevers to meet the above requirements. The fundamental structures of PAS RF MEMS switches were designed, optimized, and fabricated. Through the developed process of PAS single pole double through (SPDT), RF MEMS switches were successfully fabricated on a 4 ′′ wafer and they showed good electrical properties. The driving voltage was less than 5 volts and the insertion loss was -0.5dB and the isolation was -35dB at 5GHz. The maximum switching speed was about 5kHz. Thus these RF MEMS switches can be applicable to mobile communication devices or wireless multi-media devices at a frequency lower than 6GHz. © 2006 IOP Publishing Ltd.