Evaluating the Efficiency of CuInGaSe2 Based Solar Cells: CuSCN Hole Transport Layer (HTL) Effect

Abstract

Copper indium gallium disulfide (CuInGaSe2) or (CIGS) based solar cells are emerging solar cell structures that have attracted significant interest in recent years. In this research, a SCAPS-1D simulator was used to investigate the performance of the proposed CIGS based solar cell under the effect of a copper (I) thiocyanate (CuSCN) hole transport layer (HTL). Different photovoltaic parameters, such as the efficiency, short circuit current density (Jsc) and open-circuit voltage (Voc), are observed with respect to the doping concentration, temperature, and thickness. A comparative study is presented between a hole transport layer (HTL) and without an HTL. The simulation results demonstrate that the HTL has a significant impact and plays a major role in improving the performance of the proposed CIGS solar cell structure compared to that without the HTL. This research outlines a structured guide for both the manufacturing process and achievement of cost-effective, highly efficient solar cells.