A Lateral AlGaN/GaN Diode with MIS-Gated Hybrid Anode for Ultra-Low Turn-On and High Breakdown Voltage

Abstract

© The Author(s) 2017. In this paper, we propose and experimentally demonstrate a novel lateral AlGaN/GaN diode on Si substrate. The diode features a recessed metal/Al2O3/III-nitride (MIS)-gated ohmic hybrid anode, in which the drive current can be well controlled by the MIS-Gate and flows between the two ohmic contacts from the anode to the cathode with substantially reduced overall on-resistance (Ron). With this unique architecture, the forward turn-on voltage (VT) of the diode can be flexibly trimmed, which enables a record low VTof 0.2 V obtained in the proposed diode. The incorporation of high-k dielectric in the recessed gate region and the AlGaN back barrier realize significantly leakage current (Ileakage) reduction yet high breakdown voltage (BV). The BV as high as 1100 V at Ileakageless than 1 μA/mm with drift length of 20 μm is achieved in the proposed diode.