Here, we present evidence of self-compliant and self-rectifying bipolar resistive switching behavior in Ni/SiNx/n+ Si and Ni/SiNx/n++ Si resistive-switching random access memory devices. The Ni/SiNx/n++ Si device's Si bottom electrode had a higher dopant concentration (As ion > 1019 cm-3) than the Ni/SiNx/n+ Si device; both unipolar and bipolar resistive switching behaviors were observed for the higher dopant concentration device owing to a large current overshoot. Conversely, for the device with the lower dopant concentration (As ion < 1018 cm-3), self-rectification and self-compliance were achieved owing to the series resistance of the Si bottom electrode.
CITATION STYLE
Kim, S., Chang, Y. F., Kim, M. H., Kim, T. H., Kim, Y., & Park, B. G. (2017). Self-compliant bipolar resistive switching in SiN-based resistive switching memory. Materials, 10(5). https://doi.org/10.3390/ma10050459
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