We report the development of an in situ real-time light scattering technique to study the wet chemical etching process of Si(100). Based on a simple scattering theory, the number of etch pits and other statistical parameters such as correlation length and interface width on a pitted surface are extracted from the scattering profile. The time evolution of the surface morphology can be interpreted by a simple rate equation. © 1996 American Institute of Physics.
CITATION STYLE
Zhao, Y. P., Wu, Y. J., Yang, H. N., Wang, G. C., & Lu, T. M. (1996). In situ real-time study of chemical etching process of Si(100) using light scattering. Applied Physics Letters, 69(2), 221–223. https://doi.org/10.1063/1.117378
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