Memristors as candidates for replacing digital potentiometers in electric circuits

Abstract

Digital potentiometers are substantial components for the design of many mixed-signal electronic circuits and systems. Their capability to program resistance value almost instantly provides hardware designers an additional level of freedom. Unfortunately, this feature is limited to DC and lower frequencies, due to parasitic effects. Nowadays, memristors as continuously tunable resistors are becoming candidates for potentiometer successors. Memristors are two-terminal non-volatile devices which have less significant parasitic effects and a wide resistance range. The memristance value can be changed on the fly. Using nanotechnology, memristor implementation has a nanoscale footprint with nanosecond transition between resistive states. In this paper, we present a comparison between the frequency characteristics of digital potentiometers and the only commercially available memristors. Memristor parasitic effects dominate at higher frequencies which extends the bandwidth. In order to present the advantages of memristive circuits, we have analyzed and implemented tunable circuits such as a voltage divider, an inverting amplifier, a high-pass filter, and a phase shifter. A commercially available memristor by KnowM Inc. is used for this purpose. Experimental results obtained by the measurements verify that a memristor has equal or better characteristics than a digital potentiometer. Memristive realizations of voltage dividers and inverting amplifiers have a wider bandwidth, while filters and phase shifters with a memristor have almost identical frequency characteristics as the corresponding realizations with a digital potentiometer.