Abstract
The valence band offset (VBO) of wurtzite indium nitride/strontium titanate (InN/SrTiO3) heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 1.26 ± 0.23 eV and the conduction band offset is deduced to be 1.30 ± 0.23 eV, indicating the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band offsets paves a way to the applications of integrating InN with the functional oxide SrTiO3. © 2011 Li et al.
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CITATION STYLE
Li, Z., Zhang, B., Wang, J., Liu, J., Liu, X., Yang, S., … Wang, Z. (2011). Valence band offset of wurtzite inN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy. Nanoscale Research Letters, 6(1). https://doi.org/10.1186/1556-276X-6-193
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