Electrical characterization of 256 Mbit DRAM with carbon-implanted drain

Abstract

In this paper, we report a carbon-implanted drain on the contact to bitline per cell transistor investigated for 0.14μm dynamic random access memory (DRAM) generation. It is found that an n-metal oxide semiconductor field effect transistor (n-MOSFET) with a carbon-implanted drain can promote a 7% improvement of production yield of a 256Mbit DRAM. This technique exhibits excellent electrical properties such as threshold voltage, drive current, and bit contact resistance. This indicates that the presence of carbon suppresses transient enhanced diffusion and dislocation formation generated by other implant species. © 2005 The Electrochemical Society. All rights reserved.