Effect of fluorine implantation dose on boron thermal diffusion in silicon

H. A.W. El Mubarek; J. M. Bonar; G. D. Dilliway; P. Ashburn; M. Karunaratne; A. F. Willoughby; Y. Wang; P. L.F. Hemment; R. Price; J. Zhang; P. Ward

Journal ArticleOPEN ACCESS

Effect of fluorine implantation dose on boron thermal diffusion in silicon

Journal of Applied Physics (2004) 96(8) 4114-4121

DOI: 10.1063/1.1790063

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El Mubarek, H. A. W., Bonar, J. M., Dilliway, G. D., Ashburn, P., Karunaratne, M., Willoughby, A. F., … Ward, P. (2004). Effect of fluorine implantation dose on boron thermal diffusion in silicon. Journal of Applied Physics, 96(8), 4114–4121. https://doi.org/10.1063/1.1790063

Effect of fluorine implantation dose on boron thermal diffusion in silicon

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