Abstract
The novel trench junctionless poly-Si thin-film transistor (trench JL-TFT) with ultra-thin body (2.4 nm) is utilized to simple dry etching process. This novel devices show excellent performance in terms of steep SS (99 mV/dec.) and high ION/IOFF (>107). The ION current of the ultra-thin body (UTB) JL-TFT is increased by quantum confined effect.
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CITATION STYLE
Yeh, M. S., Wu, Y. C., Wu, M. H., Jhan, Y. R., Chung, M. H., & Hung, M. F. (2014). High performance ultra-thin body (2.4nm) poly-Si junctionless thin film transistors with a trench structure. In Technical Digest - International Electron Devices Meeting, IEDM (Vol. 2015-February, pp. 26.6.1-26.6.4). Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/IEDM.2014.7047115
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