Abstract
An innovative process development for sub-2μm CMOS imager sensors is described, leading to tremendous improvements on main pixel parameters like conversion gain, saturation charge, sensitivity, dark current and noise, A full 3MP demonstrator with 1.75μm pixel pitch and 1.45 μm pixel pitch have been successfully designed, fabricated and characterized.
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CITATION STYLE
Cohen, M., Roy, F., Herault, D., Cazaux, Y., Gandolfi, A., Reynard, J. P., … Mazaleyrat, E. (2006). Fully optimized Cu based process with dedicated cavity etch for 1.75μm and 1.45μm pixel pitch CMOS Image Sensors. In Technical Digest - International Electron Devices Meeting, IEDM. https://doi.org/10.1109/IEDM.2006.346976
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