P-n junction on high-pressure-high-temperature grown single crystal diamond: UV-emission spectra and electrical properties

Abstract

Semiconductor p+-p-n structure has been created on synthetic single crystal IIb type diamond grown by high pressure temperature gradient method and doped with boron at growth process. 250 μm thick (001) cut plate was ion implanted by B, As and P at (1 - 1.3)·1016 cm -2. Electroluminescence spectra were investigated at different values of electrical voltage and current in regular and S-part of the current-voltage characteristics. Strong exciton recombination emission was observed at the current density up to 60 A*cm-2. The spectrum transforms at transition from regular conductivity to electrical avalanche breakdown regime. Simultaneously a set of sharp EL lines appears in the range of 327-652 nm on the A-band background. They tentatively attributed to superlumenscence effect. © 2008 IOP Publishing Ltd.