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High performance MoS2 TFT using graphene contact first process

AIP Advances (2017) 7(8)
DOI: 10.1063/1.4996136
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Abstract

An ohmic contact of graphene/MoS2 heterostructure is determined by using ultraviolet photoelectron spectroscopy (UPS). Since graphene shows a great potential to replace metal contact, a direct comparison of Cr/Au contact and graphene contact on the MoS2 thin film transistor (TFT) is made. Different from metal contacts, the work function of graphene can be modulated. As a result, the subthreshold swing can be improved. And when Vg

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APA

Chang Chien, C. S., Chang, H. M., Lee, W. T., Tang, M. R., Wu, C. H., & Lee, S. C. (2017). High performance MoS2 TFT using graphene contact first process. AIP Advances, 7(8). https://doi.org/10.1063/1.4996136

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