Abstract
The organization of coherent three-dimensional islands during the growth of SiGe/Si multilayers on Si(100) was investigated with cross-sectional transmission electron microscopy. Merging of islands of different initial size is found to be the dominant mechanism leading to a uniform size distribution. Upon overgrowth with Si, we observe a change of the shape of the islands from the {105}-faceted "hut" to a boxlike shape bounded on top by a (100) facet. © 1997 American Institute of Physics.
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CITATION STYLE
Mateeva, E., Sutter, P., Bean, J. C., & Lagally, M. G. (1997). Mechanism of organization of three-dimensional islands in SiGe/Si multilayers. Applied Physics Letters, 71(22), 3233–3235. https://doi.org/10.1063/1.120300
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