Low-Loss Singlemode PECVD silicon nitride photonic wire waveguides for 532-900 nm wavelength window fabricated within a CMOS pilot line

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Abstract

PECVD silicon nitride photonic wire waveguides have been fabricated in a CMOS pilot line. Both clad and unclad single mode wire waveguides were measured at λ = 532, 780, and 900 nm, respectively. The dependence of loss on wire width, wavelength, and cladding is discussed in detail. Cladded multimode and singlemode waveguides show a loss well below 1 dB/cm in the 532-900 nm wavelength range. For singlemode unclad waveguides, losses < 1 dB/cm were achieved at λ = 900 nm, whereas losses were measured in the range of 1-3 dB/cm for λ = 780$ and 532 nm, respectively. © 2009-2012 IEEE.

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Subramanian, A. Z., Neutens, P., Dhakal, A., Jansen, R., Claes, T., Rottenberg, X., … Van Dorpe, P. (2013). Low-Loss Singlemode PECVD silicon nitride photonic wire waveguides for 532-900 nm wavelength window fabricated within a CMOS pilot line. IEEE Photonics Journal, 5(6). https://doi.org/10.1109/JPHOT.2013.2292698

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