Niobium nitride thin films are grown using reactive RF sputtering technique for four different partial nitrogen pressures in argon atmosphere. The superconducting transition temperature of the films has been measured. The films exhibit a negative temperature coefficient of resistivity. The electrical characterization of the films has been carried out and the conductivity measured between room temperature and liquid nitrogen temperature. This is fitted using TP law. © 1987 Indian Academy of Sciences.
CITATION STYLE
Menon, C. S., & Pankajakshan, V. S. (1987). Electrical conductivity and transition temperature of NbN thin films. Bulletin of Materials Science, 9(3), 187–191. https://doi.org/10.1007/BF02744267
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