Abstract
We report a series of our experiments using organic single crystals to reach the maximum performance intrinsic to the materials. A consequence of the experiments is that a good prescription for realizing high-mobility devices is to induce carriers in inner crystals to avoid scattering at the surfaces. Intrinsic-semiconductor character of the high-purity organic crystals favors thermal diffusion of the carriers into the crystals in the presence of weak gate-electric fields. © 2008 The Surface Science Society of Japan.
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Yamagishi, M., Tominari, Y., & Takeya, J. (2008). High mobility organic single-crystal transistors. In e-Journal of Surface Science and Nanotechnology (Vol. 6, pp. 21–24). The Japan Society of Vacuum and Surface Science. https://doi.org/10.1380/ejssnt.2008.21
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