Abstract
A Comment on the Letter by H.J. Xiang, B. Huang, E. Kan, S.-H. Wei, and X.G. Gong, [Phys. Rev. Lett. 110, 118702 (2013)]. The authors of the Letter offer a Reply. © 2014 American Physical Society.
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Amsler, M., Flores-Livas, J. A., Botti, S., Marques, M. A. L., & Goedecker, S. (2014, May 13). Comment on “towards direct-gap silicon phases by the inverse band structure design approach.” Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.112.199801
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