XAFS studies of Al/TiNx films on Si(100) at the Al K- and L3,2-edge

Abstract

The effect of annealing on Al diffusion through a TiNx barrier on a Si(100) wafer has been studied with Al K-edge and L3,2-edge absorption spectroscopy as a function of annealing temperature (400 °C - 600 °C). It is found that there is a noticeable change at high temperatures in the Al K-and L3,2 -edge spectra as the temperature increases. This observation is attributed to the formation of a stable protective surface oxide. Fluorescence yield shows that most of the Al metal remains intact after annealing.