Simulation of hyperthermal deposition of Si and C on SiC surfaces

Abstract

We describe the adsorption dynamics of Si and C atoms at supersonic velocities on Si- and C-terminated 6H-SiC(0001) substrates using molecular dynamics simulations. The sticking probabilities of adatoms are found to be very high and not to change substantially with increasing incident kinetic energy. We identify two mechanisms responsible for the high sticking probabilities of the adatoms: (a) efficient transfer of adatom energy to the substrate and (b) strong attractive forces experienced by the impinging adatom over the entire surface. The calculated potential energy surfaces reveal possible binding sites of the adatoms on the substrates. © 1999 American Institute of Physics.