High-quality and thick InN films grown on 2-inch sapphire substrate by molecular-beam epitaxy

Abstract

InN growth on 2-inch sapphire (0001) with thickness up to 5 μm was demonstrated by radio-frequency plasma-assisted molecular beam epitaxy (rf-MBE). The surfaces of the 2-inch samples were mirror-like and atomic growth steps were observed in large areas. The room temperature Hall mobility crossing the 2-inch InN wafers ranged from 900 to 1100 cm2/V s, with electron concentration of the order of 1018/cm3. The optical bandgap of the InN layers with electron concentration of the order of 10 18/cm3 was 0.70-0.74 eV measured by optical transmission/reflection spectroscopy. © 2003 WILEY-VCH Verlag GmbH & Co. KGaA.