Doping-concentration and annealing effects on photoluminescence profile of Eu(III)-doped CeO2 nanorods

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Abstract

Eu(III)-doped CeO2 nanorods were prepared by a co-precipitation method at room temperature, and their photoluminescence profiles were examined with different Eu(III)-doping concentrations and thermal annealing temperatures. Scanning electron microscopy, X-ray diffraction crystallography and UV-Vis absorption spectroscopy were employed to examine the morphology, crystal structure and photon absorption profiles of the nanorods, respectively. Additionally, their 2D and 3D-photoluminescence profile maps were obtained to fully understand the photoluminescence mechanism. We found that the magnetic dipole 5D0 → 7F1 and the electric dipole 5D0 → 7F2 transitions of Eu(III) were highly dependent on the doping concentration, annealing temperature and excitation wavelength, which was explained by the presence of different Eu(III)-doping sites (with and without an inversion center) in the CeO2 host with a cubic crystal structure.

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Lee, J., Park, Y., Joo, S. W., & Sohn, Y. (2014). Doping-concentration and annealing effects on photoluminescence profile of Eu(III)-doped CeO2 nanorods. Bulletin of the Korean Chemical Society, 35(11), 3319–3325. https://doi.org/10.5012/bkcs.2014.35.11.3319

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