Memristive Switching: Magneto‐Memristive Switching in a 2D Layer Antiferromagnet (Adv. Mater. 2/2020)

Abstract

In article number 1905433, Adam W. Tsen and co‐workers simultaneously demonstrate magnetic‐field‐tunable memristive switching and electrical control of magnetism in nanoscale tunnel junctions incorporating a 2D layer antiferromagnet, chromium triiodide. Driven by the positive feedback of self‐heating, the current and magnetic transitions are robust and further occur under a 40 ns timescale. Such devices may find potential applications in spintronics, neuromorphic computing, and phase‐change memory.