Abstract
AgGaSe2 is a potential material for the preparation of Schottky diodes and solar cells. p-AgGaSe2/n-CdS heterojunctions were fabricated and the J-V, C-V and spectral response characteristics were studied. The typical cell parameters obtained were: Voc=510 mV, Jsc= 13.8 mA/cm2, FF=0.55 and gh=4.5%. © 1991.
Cite
CITATION STYLE
APA
Murthy, Y. S., Hussain, O. M., Naidu, B. S., & Reddy, P. J. (1991). Characterization of p-AgGaSe2/n-CdS thin film heterojunction. Materials Letters, 10(11–12), 504–508. https://doi.org/10.1016/0167-577X(91)90217-T
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
Already have an account? Sign in
Sign up for free