Photoluminescence excitation measurements on GaAs:Er grown by molecular-beam epitaxy

Abstract

Using a tunable color center laser, photoluminescence excitation measurements were performed on GaAs:Er grown by molecular-beam epitaxy. These measurements show that only one type of Er3+ center is responsible for the sharply structured emission band at 1.54 μm. The multiplicity of the zero-phonon lines indicates that this Er3+ center has lower than cubic symmetry and that the luminescence arises from the intracenter transition 4I13/2→4I15/2 of Er3+ (4f 11).