Structural transformation of the BiSbTeSe2 topological insulator during Co laser MBE deposition

Abstract

The studies of the structural transformation of BiSbTeSe2 topological insulator during Co deposition were carried out. It was shown that Co, being deposited on BiSbTeSe2(0001) at 330°C, substantially modifies topmost part of the substrate. Reciprocal space mapping studies using RHEED data analysis reveal formation of the well-ordered layer with the modified composition and crystalline structure. It was found that this layer consists of three orthorhombic structural domains oriented at 120° to each other. Each domain has Pmnn space group characteristic fot CoTexSe2-x. The lattice parameters and epitaxial relations were found.