Ultrathin superconducting TaCxN1−x films prepared by plasma-enhanced atomic layer deposition with ion-energy control

Abstract

This work demonstrates that plasma-enhanced atomic layer deposition (PEALD) with substrate biasing enables the preparation of ultrathin superconducting TaCxN1−x films. By comparing with films grown without substrate biasing, the enhanced ion energies yield a hundredfold reduction in room-temperature resistivity: a comparably low value of 217 μΩ cm is obtained for a 40 nm film. The ion-energy control enables tuning of the composition, counteracts oxygen impurity incorporation, and promotes a larger grain size. Correspondingly, the critical temperature of superconductivity (Tc) displays clear ion-energy dependence. With optimized ion energies, a consistently high Tc around 7 K is measured down to 11 nm film thickness. These results demonstrate the high ultrathin-film quality achievable through PEALD combined with substrate biasing. This process is particularly promising for the fabrication of low-loss superconducting quantum devices.