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Charge state effect on Si K X-ray emission induced by Iq+ ions impacting

Journal of Physics: Conference Series (2014) 488(SECTION 13)
DOI: 10.1088/1742-6596/488/13/132038
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Abstract

K X-ray emission of Si induced by Iq+ (q=20, 22, 25) ion impact has been investigated. The results show a much higher intensity of X-ray emission for I25+ ions bombardment compared to I20+ and I22+ ions. The experimental data are explained within the framework of 3dπ, δ-3dσ rotational coupling.

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Lei, Y., Zhao, Y., Cheng, R., Zhou, X., Sun, Y., Wang, X., … Xu, G. (2014). Charge state effect on Si K X-ray emission induced by Iq+ ions impacting. In Journal of Physics: Conference Series (Vol. 488). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/488/13/132038

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