Growth of 3-inch langasite single crystal and its application to substrate for surface acoustic wave filters

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Abstract

Macro defect-free langasite (La3Ga5SiO14) of 3″ diameter was grown by the Czochralski technique. Thermal treatment of the melt and a uniform interface shape are important for langasite growth with a clear habit of faceting. The homogeneity in composition was two-dimensionally investigated by X-ray diffraction analysis and SAW (surface acoustic wave) velocity distribution on the wafer fabricated from the crystal. The deviation was sufficiently small for the use of langasite as a suitable substrate in SAW device applications. SAW properties were calculated based on the available material constants. © 1999 Publication Board, Japanese Journal of Applied Physics.

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Uda, S., Bungo, A., & Jian, C. (1999). Growth of 3-inch langasite single crystal and its application to substrate for surface acoustic wave filters. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 38(9 B), 5516–5519. https://doi.org/10.1143/jjap.38.5516

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