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Vertical Al2Se3/MoSe2 heterojunction on sapphire synthesized using ion beam

RSC Advances (2017) 7(17) 10154-10157
DOI: 10.1039/c6ra28273c
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Abstract

The vertical Al2Se3/MoSe2 heterojunction on sapphire was first fabricated via an ion beam-assisted process. The MoSe2 was formed via Mo selenization, while Al2Se3 was formed via Se substitution for O in sapphire. The applications of this heterojunction will be developed in the future.

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Tsai, H. S., Liou, J. W., Wang, Y. C., Chen, C. W., Chueh, Y. L., Hsiao, C. H., … Liang, J. H. (2017). Vertical Al2Se3/MoSe2 heterojunction on sapphire synthesized using ion beam. RSC Advances, 7(17), 10154–10157. https://doi.org/10.1039/c6ra28273c

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