Anodic aluminum oxide membrane-assisted fabrication of β-In 2S 3 nanowires

Abstract

In this study, β-In 2S 3 nanowires were first synthesized by sulfurizing the pure Indium (In) nanowires in an AAO membrane. As FE-SEM results, β-In 2S 3 nanowires are highly ordered, arranged tightly corresponding to the high porosity of the AAO membrane used. The diameter of the β-In 2S 3 nanowires is about 60 nm with the length of about 6-8 μm. Moreover, the aspect ratio of β-In 2S 3 nanowires is up to 117. An EDS analysis revealed the β-In 2S 3 nanowires with an atomic ratio of nearly S/In = 1.5. X-ray diffraction and corresponding selected area electron diffraction patterns demonstrated that the β-In 2S 3 nanowire is tetragonal polycrystalline. The direct band gap energy (E g) is 2.40 eV from the optical measurement, and it is reasonable with literature. © to the authors 2009.