Modeling and Analysis of Device Orientation, Analog and Digital Performance of Electrode Design for High Speed Electro-Optic Modulator

Abstract

Electro-optic modulators (EOMs) are crucial devices for modern communication enabling high bandwidth optical communication links. Traveling wave electrodes are used to obtain high-speed modulation in these EOMs. We present the electrode design and analysis along with the study of effects of changing orientation on device performance for a thin-film lithium niobate tunable Mach–Zehnder interferometer (MZI) that offers sub-THz bandwidth operations. High velocity and impedance matching with low RF attenuation, high third-order SFDR (∼121 dB/Hz2/3) and a low half-wave voltage length product (1.74 V.cm) have been achieved for a bandwidth of 136 GHz. High-speed digital modulation using multi-level signal formats (PAM-2, QAM-4 and QAM-16) with low BER for 400 Gbps data has been demonstrated to assess the digital performance of the device.