Abstract
This paper discusses the breakdown voltage (BVDSS) characteristics of an n-channel charge balanced shielded gate trench power MOSFET. The study emphasizes on elements that affect the BVDSS stability of such devices to gain good control on design and process/device parameters in order to produce a robust product. Breakdown voltage (BV DSS) walk-in or walk-out can be observed when certain process (e.g., epi doping concentration) and design layout (e.g., termination) conditions are not in coherence. © 2014 IEEE.
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CITATION STYLE
Hossain, Z., Burra, B., Sellers, J., Pratt, B., Venkatraman, P., Loechelt, G., & Salih, A. (2014). Process & design impact on BVDSS stability of a shielded gate trench power MOSFET. In Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp. 378–381). Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/ISPSD.2014.6856055
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