A Study of the Hall Effect on Doped and Undoped Praseodymium Nickelate Perovskite Thin Films and the Impact of the Reduction Process

Abstract

PrNiO3 and Pr0.8Sr0.2NiO3 epitaxial thin films were deposited by pulsed laser deposition (PLD) on different substrates and studied for Hall effect and resistivity behavior. Conductive behavior is observed in the doped composition, and a normal Hall effect allows to determine charge carrier’s density and mobility. The doped compositions show a high concentration of charge carriers (≈1023 cm−3 at 300 K), and it appears that they can be controlled by the strains. Sr doping enhances the transport properties, leading to a transition from semiconducting to metallic behavior. The impact of the reduction process on charge carrier concentration and mobility is also studied.