Preparation of epitaxial templates for molecular beam epitaxy of III-nitrides on silicon substrates

Abstract

In this paper, three different methods of composite substrate preparation for epitaxial growth of III-nitride epilayers are described. Firstly, molecular beam epitaxy (MBE) of thin 2H-AlN layers grown on off-axis Si(001) has been investigated. 2H-AlN was deposited at relatively low temperatures (730-830 °C) allowing a full coverage of the substrate to be quickly achieved. The growth of thin 3C-SiC layers on Si surface has been performed by chemical vapor deposition and MBE carbonization. The following types of SiC/Si composite substrates have been studied: (i) SiC/Si templates grown by rapid thermal carbonization of the Si surface, (ii) SiC/Si templates formed by MBE carbonization of the Si surface. © 2002 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.