Abstract
Atomic defects in solid-state materials are building blocks for future quantum technologies, such as quantum communication networks, computers, and sensors. Until recently, a handful of defects in a small selection of host materials have been possible candidates. Recent developments have revealed that hexagonal boron nitride, a wide-bandgap two-dimensional material, hosts single-photon-emitting atomic defects with access to optically addressable electronic and nuclear spins at room temperature. Now, atomically thin quantum devices that operate at ambient conditions are a possibility. In this perspective, we discuss the recent progress, and challenges, in understanding the fundamental photophysics of defects in hBN, as well as specific opportunities they present for the development of quantum technologies.
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Vogl, T., Ivády, V., Luxmoore, I. J., & Stern, H. L. (2026, June 1). Defects in hexagonal boron nitride for quantum technologies: a perspective. 2D Materials. Institute of Physics. https://doi.org/10.1088/2053-1583/ae566e
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