Abstract
Site-dependent adsorption structures of Xe atoms on a (formula presented) surface were studied by scanning tunneling microscopy at 8 K. Xe atoms initially adsorb as dimers on the site between a rest atom and its two neighboring center adatoms, and then near the corner adatom site. Similar structures were formed at both the faulted half (FH) and the unfaulted half (UH) of the (formula presented) unit. The observed structure is in excellent agreement with that estimated by the rigid ball model, however, site-dependent bias dependence and different stabilities were observed for them, indicating the existence of different interactions between Xe and Si atoms in the (formula presented) unit despite the stable electronic structure of Xe. Based on the results with thermal desorption spectroscopy, the adsorption energies are estimated to be 200 and 220 meV for FH and UH units, respectively. © 2002 The American Physical Society.
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CITATION STYLE
Li, Y. J., Takeuchi, O., Futaba, D. N., Oigawa, H., Miyake, K., Shigekawa, H., & Kuk, Y. (2002). Characteristic adsorption of (formula presented) on a (formula presented) surface at low temperature. Physical Review B - Condensed Matter and Materials Physics, 65(11), 1–4. https://doi.org/10.1103/PhysRevB.65.113306
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