High-temperature defect study of tellurium-enriched CdTe:In

Abstract

The defect structure of donor-doped Te-rich CdTe is studied theoretically within quasi-chemical formalism and experimentally in heavily In-doped CdTe by in situ high temperature galvanomagnetic measurements in the temperature interval 900-200°C. The experimental data are evaluated within defect model optimized to recent high temperature experiments and assuming doping-induced band gap renormalization. We show that a proper thermal treatment can be conveniently used for the optimization of room temperature electric properties and for a preparation of the semi-insulating detector grade material with a deep level doping below the limit 1013 cm-3 demanded in the detector industry. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.