Solution-based in situ deposition of Sb2S3 from a single source precursor for resistive random-access memory devices

Abstract

A one-step, simple, scalable, reproducible, low-temperature, and in situ solvothermal deposition method has been established for the growth of Sb2S3 on FTO using [Sb{S2P{O(Pr)2}3] as a single source precursor without a binding agent. XRD, Raman, SAED, and HRTEM results revealed the crystalline orthorhombic stibnite phase. The sheaf-like Sb2S3 exhibited a band gap energy of 1.72 eV. The Sb2S3 film is uniform and well-adhered and is further developed as a novel resistive random-access memory material. The Ag/Sb2S3/FTO memristive device demonstrated low operating voltage and the performance of the device over multiple cycles revealed dependable bipolar resistive switching behaviour and an ON/OFF ratio of ca. 10.