Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type gan by MG doping followed by low- energy electron beam irradiation

Abstract

This is a personal history of one of the Japanese researchers engaged in developing a method for growing GaN on a sapphire substrate, paving the way for the realization of smart television and display systems using blue LEDs. The most important work was done in the mid- to late 80s. The background to the author's work and the process by which the technology enabling the growth of GaN and the realization of p-type GaN was established are reviewed.