Insights into electroluminescent emission from AlGaN/GaN field effect transistors using micro-Raman thermal analysis

Abstract

We present an analysis of AlGaNGaN heterostructure field effect transistor's electric field and current distributions by electroluminescent emission and micro-Raman thermal analysis techniques. Raman and electroluminescence are complementary since they probe lattice and electron energy distributions, respectively. Electroluminescent (EL) emission and Joule self-heating are normally confined close to the drain edge of the gate in the high field region. But in some nonideal devices, the EL and self-heating peak are shifted towards the drain. There is evidence for an inhomogeneous current distribution and possibly nonradiative energy dissipation. © 2006 American Institute of Physics.