(Invited) UV Excimer Laser Assisted Heteroepitaxy of (Si)GeSn on Si(100)

Abstract

Fabrication of Photonic Integrated Circuits (PICs) using CMOS compatible direct bandgap Group-IV heterostructures is of increasing concern from scientific, technological, and economic point of view. Growth of group IV alloys, such as the Silicon-Germanium-Tin (Si-Ge-Sn) binaries and ternaries through CMOS compatible techniques is therefore of particular interest. This contribution presents UV-Laser based processes, such as Laser induced Chemical Vapor Deposition (LCVD) and Pulsed Laser Induced Epitaxy (PLIE) combined with conventional processing techniques, for material synthesis as well as results obtained growing different (Si)GeSn binary and ternary systems for material and lattice engineering. Synthesis of epitaxial (Si)GeSn alloys with above 10% Sn in large areas and of SiGeSn/GeSn micropatterns, through scanning and mask projection assisted PLIE, respectively, will be discussed. Emphasis will be placed on the influence of processing parameters on compositional and structural properties of the epitaxial alloys.