Preliminary Studies on the Reflectance Characteristics of graphene/SiO2 under Different Applied Voltages for Optical Modulation Applications

Abstract

A preliminary study on the interband transition of graphene was done via reflectance spectra of graphene/SiO2 sample at various applied potential. Prior to that, Raman spectroscopy and four-point probe measurement was done on graphene/SiO2 sample. It was found that the sample consisted of monolayer graphene with sheet resistance around 402.32 ω/□. Post-processing of the reflectance data lead to the plot of ratio of change in reflectance towards reflectance at 0 V (ΔR/R) against applied potential. From there, the ratio increases along with applied potential, indicative of higher absorption due to interband transition.