N/S co-doped carbon dots-based solution-gated graphene transistors (SGGT) for ultra-sensitive and selective determination of Hg (II) ions in real water and serum samples

Abstract

The conventional methods for detecting Hg2+ ions are generally impaired by low sensitivity, a high limit of detection (LOD), and the long detection time required. In this work, we develop a novel solution gated graphene transistor (SGGT) based on carbon dots doped with N and S elements (N/S CDs) as gate electrode probes. The prepared N/S CDs, which are 3–5 nm in diameter, are first modified at the gate of the SGGT through covalent bonding that specifically recognizes Hg2+ ions. The SGGT is then used as a Hg2+ sensor, exhibiting good selectivity, ultrahigh sensitivity, good reproducibility, and a short detection time. The SGGT sensor has an excellent linear detection range, from 0.1 fM to 1 nM. The LOD can reach 28 aM, which is far lower than that of conventional detection methods. Moreover, the SGGT sensor also has a rapid response time of ∼ 40 s. Finally, the ability to analyze real water samples and serum samples is demonstrated.