Abstract
Electroabsorption in an InGaAs/GaAs strained-layer multiple quantum well structure has been observed. With only ten quantum wells, 6.4% transmission modulation was obtained at 0.950 μm with 2 V reverse bias. A single absorption peak was observed, in contrast to the double peak observed in similar GaAs/AlGaAs structures. The present structure is fabricated on a GaAs substrate which is transparent to light at the exciton absorption wavelength.
Cite
CITATION STYLE
APA
Van Eck, T. E., Chu, P., Chang, W. S. C., & Wieder, H. H. (1986). Electroabsorption in an InGaAs/GaAs strained-layer multiple quantum well structure. Applied Physics Letters, 49(3), 135–136. https://doi.org/10.1063/1.97202
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