Low temperature polysilicon super-thin-film transistor (LSFT)

Abstract

Advanced polysilicon SFT’s (Super-thin-Film Transistor) were fabricated on quartz at a low temperature process below 610°C. Using the technique of Si+ ion implanted amorphization and subsequent solid phase growth and making a super-thin-film structure, superior electrical characteristics such as high electron mobility of 60 cm2/(V.s) were obtained. The oscillation of a 19 stage ring oscillator with a channel length of 8.4 μm was observed. Propagation delay time of 8.13 ns/stage was attained. The device is expected to be applied to monolithic liquid-crystal-display on low temperature glass and three dimensional LSI technology. © 1986 The Japan Society of Applied Physics.