MOMBE growth of GaSb and InAsSb using triethylstibine and triethylarsine

Abstract

We report metalorganic molecular beam epitaxial (MOMBE) growth of GaSb and InAsSb using triethylgallium (TEGa), trimethylindium (TMIn), triethylstibine (TESb), and triethylarsine (TEAs). For GaSb growth, the maximum growth rate is observed at a substrate temperature of 500°C. This is associated with the use of TESb instead of solid Sb, where the alkyl species coming from thermally cracked TESb also play important roles in the pyrolysis of TEGa. For InAsSb growth, it is found that pyrolysis of TMIn at substrate temperatures below 400°C is decomposition limited. Precise control of solid composition for InAs1-xSbx in the range of 0≤χ≤0.6 is confirmed in the temperature range from 400 to 500°C. © 1991.